Igumbor E.; Dongho-Nguimdo M.; Mapasha E.; Kalimuthu R.; Raji A.; Meyer W., Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance, Journal of Electronic Materials 53 (4), pp. 1903.
Igumbor E.; Dongho-Nguimdo M.; Mapasha E.; Kalimuthu R.; Raji A.; Meyer W., Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance, Journal of Electronic Materials 53 (4), pp. 1903.
